Aluminium Oxide Etching (Al2O3 ) 

  • Plasma 
  • Ion Beam 
  •  
  •  
  •  
 

80° Wall etching in sapphire

Reactive Ion Etching with ICP Source (13.56 MHz)

Etch rate  65 nm/ min
Uniformity  +/- 2.5 % (2“)

 

Ionfab 300Plus

Al2O3 Ion Beam Etch (IBE) in the Ionfab300Plus (LC)

  • Process gases: Ar, CHF3, O2
  • Up to 200mm wafers
  • Summary performance data

 Chamber base pressurea  <3e-7 Torr
 Load lock base pressureb  <1e-5 Torr

a. After 12 hours bake out at 80°C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock
pump down sequence.

Process specification

1. Al2O3 etch with rotation and adjustable tilt.

Notes: 
1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features.
2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity.
3. With 5mm edge exclusion, uniformity described below.

Parameter/Process  Al2O3 etch 
Diameter etched  200 mm
Mask PR
Gas chemistry  Ar+ CHF3+O2
Typical etch rate [nm/min]  10nm/min
Uniformity [±%]3 <3
Reproducibility [±%] <3
Selectivity to mask  >1

Additional Notes:  

1. Regular cleaning and conditioning of the chamber is required. This may occasionally involve a mechanical clean of the chamber.

2. Some variation in etch rate, selectivity and profile will be observed between wide features and narrow features. Etch rate, profile, and selectivity data given above applies to wide features.

3. Mask is PR unless otherwise stated

4. Profiles quoted require original mask profile to be >85°
Standard definitions of uniformity given below:

Within wafer uniformity is measured in a five point pattern:

Click here for uniformity

  

 Click for uniformity

 Ion Beam Etch and Deposition

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Related Products

PlasmaPro System100
Load Locked Tool for Al2O3 Etch
PlasmaPro System133
Load Locked Tool for Al2O3 Etching
Ionfab 300Plus
Ion Beam tool for Al2O3 Ion Beam Etch

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